Reliability wearout mechanisms in advanced CMOS technologies / Alvin W. Strong ... [et al.].
Material type:
TextSeries: IEEE Press Series on Microelectronic Systems ; 12Publisher: Piscataway, New Jersey : IEEE Press, c2009Description: 1 PDF (xv, 624 pages) : illustrationsContent type: - text
- electronic
- online resource
- 9780470455265
- Metal oxide semiconductors, Complementary -- Reliability
- Acceleration
- Atomic measurements
- Books
- CMOS integrated circuits
- CMOS technology
- Charge carrier processes
- Degradation
- Dielectrics
- Electric breakdown
- Electromigration
- Electron traps
- Force
- Hot carriers
- Indexes
- Interface states
- Junctions
- Logic gates
- MOSFET circuits
- Materials
- Metallization
- Nitrogen
- Reliability
- Reliability engineering
- Silicon
- Strain
- Stress
- Substrates
- Transistors
- Wires
- ELT 358f
- ZN 4960
Includes bibliographical references and index.
Introduction / Alvin W. Strong -- Dielectric characterization and reliability methodology / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Su�n�e -- Dielectric breakdown of gate oxides: physics and experiments / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Su�n�e -- Negative bias temperature instabilities in pMOSFET devices / Giuseppe LaRosa -- Hot carriers / Stewart E. Rauch, III -- Stress-induced voiding / Timothy D. Sullivan -- Electromigration / Timothy D. Sullivan.
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Mode of access: World Wide Web.
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