Insulated gate bipolar transistor (IGBT) : theory and design / Vinod Kumar Khanna.

By:

Khanna, Vinod Kumar, 1952-

Contributor(s):

Material type: Text

TextPublisher: Piscataway, New Jersey : IEEE Press, c2003Distributor: [Piscataqay, New Jersey] : IEEE Xplore, [2005]Description: 1 PDF (xix, 627 pages) : illustrationsContent type:

text

Media type:

electronic

Carrier type:

online resource

ISBN:

9780471722915

Other title:

IGBT

Subject(s):

Genre/Form:

Electronic books.

Additional physical formats: Print version:: No titleDDC classification:

621.3815/282

Online resources:

Abstract with links to resource

Also available in print.

Contents:

Preface. -- Power Device Evolution and the Advert of IGBT. -- IGBT Fundamentals and Status Review. -- MOS Components of IGBT. -- Bipolar Components of IGBT. -- Physics and Modeling of IGBT. -- Latch-Up of Parasitic Thyristor in IGBT. -- Design Considerations of IGBT Unit Cell. -- IGBT Process Design and Fabrication Technology. -- Power IGBT Modules. -- Novel IGBT Design Concepts, Structural Innovations, and Emerging Technologies. -- IGBT Circuit Applications. -- Index.

Summary: A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. . All-in-one resource. Explains the fundamentals of MOS and bipolar physics.. Covers IGBT operation, device and process design, power modules, and new IGBT structures.

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Includes bibliographical references and index.

Restricted to subscribers or individual electronic text purchasers.

A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. . All-in-one resource. Explains the fundamentals of MOS and bipolar physics.. Covers IGBT operation, device and process design, power modules, and new IGBT structures.